Resist remover composition

ABSTRACT

The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises a) 10 to 40 wt. % of water-soluble organic amine compound, b) 10 to 60 wt. % of water-soluble polar organic solvent, c) 10 to 30 wt. % of water, and d) 0.1 to 10 wt. % of organic phenol compound containing two or more hydroxyl groups, and it is characterized in that the water-soluble polar organic solvent is 2-hydroxyisobutyric acid methylester (HBM).

BACKGROUND OF THE INVENTION

(a) Field of the Invention

The present invention relates to a remover composition for removingresists during a manufacturing process of semiconductor devices such asintegrated circuits (IC), large scale integrated circuits (LSI) and verylarge scale integrated circuits (VLSI). More particularly, the presentinvention relates to a resist remover composition which can easily andquickly remove resist film that is cured by dry etching, ashing and ionimplantation processes that have been recently emphasized due to theminiaturization and integration of circuit patterns duringphotolithography, and photoresist film modified by metallicside-products etched from lower metal film materials during saidprocesses, at a low temperature, and which can minimize the corrosion oflower metal wiring during the resist removal process.

(b) Description of the Related Art

Generally, manufacturing processes of semiconductor devices compriselithography processes that comprise forming a resist pattern on aconductive layer formed on a semiconductor substrate, and then forming aconductive layer pattern using the pattern as a mask. The resist patternused as a mask must be removed from the conductive layer with resistremover during the stripping process after the conductive layer patternforming process. However, since in recent very large scale integratedcircuit semiconductor manufacturing, a dry etching process for formingconductive layer patterns has been conducted, it becomes difficult toremove resists in a subsequent stripping process.

In a dry etching process which replaces a wet etching process usingliquid-phase acids, the etching process is conducted using a gas-phasesolid-phase reaction between plasma etching gases and layers such as theconductive layer. Dry etching forms the main-stream of recent etchingprocesses, because it is easy to control and can obtain sharp patterns.However, since during a dry etching process, ions and radicals of plasmaetching gases cause complex chemical reactions with the resist film onits surface and rapidly cure it, it becomes difficult to remove theresist. Examples of dry etching include reactive ion etching (RIE),which renders it difficult to remove resist in a reproducible mannerusing conventional resist removers.

Another process that makes the removal of resists difficult is an ionimplantation process. This process is conducted to diffuse atoms such asphosphorous, arsenic, boron, etc., in order to allow conductivity in aspecific area of a silicon wafer in manufacturing processes ofsemiconductor devices. During this process, ions are injected only intoa silicon wafer area that is not covered by the resist pattern, andsimultaneously the surface of the resist pattern used as a mask in theion implantation process is modified by a chemical reaction between thesurface and accelerated ion beams. Accordingly, after the ionimplantation process, it becomes difficult to remove the resist filmusing various solvents in a stripping process.

A resist film that has undergone the above-mentioned dry etching processor ion implantation process cannot be sufficiently removed usingconventional phenol resist remover, and even if removed, inferiorityrates of semiconductor devices increase because high temperature of 100°C. or more and long immersion time are required, and thus the strippingprocess cannot be stably conducted. For this reason, phenol resistremover is presently seldom used at a manufacturing site.

Meanwhile, a recently suggested resist remover composition comprisingalkanol amine and diethyleneglycol monoalkyl ether has been widely usedbecause it has little odor and toxicity and exhibits effective removingperformance for most resist films. However, it has also been found thatsaid remover composition cannot sufficiently remove resist film exposedto plasma etching gases or ion beams in a dry etching process or an ionimplantation process. Thus, there has been a need for the development ofa novel resist remover that can remove resist film modified by the dryetching and ion implantation processes.

As stated above, it is difficult to remove resist film that hasundergone the ion implantation process using resist remover.Particularly, it is more difficult to remove resist film that hasundergone the ion implantation process with a high radiation dose forforming source/drain area in very large scale integrated circuitmanufacturing process. During the ion implantation process, the surfaceof the resist film is cured mainly due to reaction heat from the highenergy ion beams and the high radiation dose. In addition, popping ofthe resist occurs which generates resist residues. Commonly, asemiconductor wafer that is ashing-treated is heated to a hightemperature of 200° C. or more. At this time, solvent remaining insidethe resist should be evaporated and exhausted, which is not possiblebecause a cured layer exists on the surface of the resist after the ionimplantation process with a high radiation dose.

Accordingly, as ashing proceeds, internal pressure of the resist filmincreases and the surface of the resist film is ruptured by solventremaining inside, which is referred to as popping. The surface curedlayer dispersed by such popping becomes residues and they are difficultto remove. In addition, since the cured layer on the surface of theresist forms by heat, impurity ions, or dopants, are substituted in thestructure of resist molecules to cause a cross-linking reaction, and thereacted area is oxidized by O2 plasma. Thus the oxidized resist changesinto residues and particles to become contaminants, which lowers theproduction yield of very large scale integrated circuit manufacture.

Many dry and wet etching processes for effectively removing the resistcured layer have been suggested, one of which is a two step ashingmethod comprising conducting common ashing and following with a secondashing process as described in Fujimura, Japanese Spring ApplicationPhysical Society Announcement, 1P-13, p574, 1989. However, these dryetching processes are complicated, they require a lot of equipment andthey lower production yield.

In addition, a resist remover composition comprising an organic aminecompound and various organic solvents has been suggested as a resistremover used in a conventional wet stripping process. Specifically, aresist remover composition containing monoethanolamine (MEA) as theorganic amine compound is widely used.

As examples, a two-component system resist stripper compositioncomprising a) organic amine compounds such as monoethanolamine (MEA),2-(2-aminoethoxy)ethanol (AEE), etc., and b) polar solvents such asN,N-dimethylacetamide (DMAc), N,N-dimethylformamide (DMF),N-methylpyrrolidone (NMP), dimethylsulfoxide (DMSO), carbitol acetate,methoxyacetoxypropane, etc. (U.S. Pat. No. 4,617,251); a two-componentsystem resist stripper composition comprising a) organic amine compoundssuch as monoethanolamine (MEA), monopropanolamine, methylamylethanol,etc., and b) amide solvents such as N-methylacetamide (Mac),N,N-dimethylacetamide (DMAc), N,N-dimethylformamide (DMF),N,N-dimethylpropionamide, N,N-diethylbutylamide,N-methyl-N-ethylpropionamide, etc. (U.S. Pat. No. 4,770,713); atwo-component system resist stripper composition comprising a) organicamine compounds such as monoethanolamine (MEA), and b) non-protonicpolar solvents such as 1,3-dimethyl-2-imidazolidinone (DMI),1,3-dimethyl-tetrahydropyrimidinon, etc. (German Laid-Open PatentApplication No. 3,828,513); a resist stripper composition comprising a)ethylene oxide-introduced alkylene polyamines of alkanol amines such asmonoethanolamine (MEA), diethanol amine (DEA), triethanolamine (TEA),etc., and ethylenediamine, b) sulfone compounds such as sulforane, etc.,and c) glycol monoalkyl ethers such as diethylene glycol monoethylether, diethylene glycolmonobutyl ether, etc., in a specific ratio(Japanese Laid-open Patent Publication No. Sho 62-49355); a resiststripper composition comprising a) water soluble amines such asmonoethanolamine (MEA), diethanolamine (DEA), etc., and b)1,3-dimethyl-2-imidazolidinone (Japanese Laid-open Patent PublicationNo. Sho 63-208043); a positive resist stripper composition comprising a)amines such as monoethanolamine (MEA), ethylenediamine, piperidine,benzyl amine, etc., b) polar solvents such as DMAC, NMP, DMSO, etc., andc) a surfactant (Japanese Laid-open Patent Publication No. Sho63-231343); a positive resist stripper composition comprising a)nitrogen-containing organic hydroxy compounds such as monoethanolamine(MEA), b) one or more solvents selected from diethyleneglycol monoethylether, diethyleneglycol dialkyl ether, -butyrolactone and1,3-dimethyl-2-imidazolinone, and c) DMSO in a specific ratio (JapaneseLaid-open Patent Publication No. Sho 64-42653); a positive resiststripper composition comprising a) organic amine compounds such asmonoethanolamine (MEA), etc., b) a non-protonic polar solvent such asdiethylene glycol monoalkyl ether, DMAc, NMP, DMSO, etc., and c) aphosphate ester surfactant (Japanese Laid-open Patent Publication No.Hei 4-124668); a resist stripper composition comprising a)1,3-dimethyl-2-imidazolidinone (DMI), b) dimethylsulfoxide (DMSO), andc) organic amine compounds such as monoethanolamine (MEA), etc.(Japanese Laid-open Patent Publication No. Hei 4-350660); and a resiststripper composition comprising a) monoethanolamine (MEA), b) DMSO, c)catechol (Japanese Laid-open Patent Publication NO. Hei 5-281753) havebeen suggested and these resist stripper compositions show relativelygood properties in terms of their stabilities, processabilities andresist removing performances.

However, one of the recent tendencies of semiconductor devicemanufacturing processes is treating various substrates including siliconwafers at a high temperature of 110 to 140° C., and thus resists areoften baked at high temperatures. However, said resist strippers do nothave sufficient capabilities for removing resists that are baked at hightemperatures. As compositions for removing the hard baked resists,resist remover compositions containing water and/or hydroxylamine havebeen suggested. As examples, a resist stripper composition comprising a)hydroxylamines, b) alkanol amines, and c) water (Japanese Laid-openPatent Publication No. Hei 4-289866; a resist stripper compositioncomprising a) hydroxylamines, b) alkanol amines, c) water and d)anti-corrosives (Japanese Laid-open Patent Publication No. Hei6-266119); a resist stripper composition comprising a) polar solventssuch as GBL, DMF, DMAc, NMP, etc., b) aminoalcohols such as2-methylaminoethanol, and c) water (Japanese Laid-open PatentPublication No. Hei 7-69618); a stripper composition comprising a)aminoalcohols such as monoethanolamine (MEA), b) water, and c)butyldiglycol (Japanese Laid-open Patent Publication No. Hei 8-123043);a resist stripper composition comprising a) alkanolamines, alkoxyamines,b) glycol monoalkyl ether, c) sugar alcohols, d) quaternary ammoniumhydroxide, and e) water (Japanese Laid-open Patent Publication No. Hei8-262746); a stripper composition comprising a) one or morealkanolamines of monoethanolamine (MEA) or AEE, b) hydroxylamine, c)diethyleneglycol monoalkyl ether, d) sugars (sorbitol), and e) water(Japanese Laid-open Patent Publication No. Hei 9-152721); a resiststripper composition comprising a) hydroxylamines, b) water, c) amineshaving an acid dissociation constant (pKa) of 7.5 to 13, d) watersoluble organic solvent, and e) an anticorrosive (Japanese Laid-openPatent Publication No. Hei 9-96911) have been suggested.

However, said resist stripper compositions are not satisfactory in termsof either their removing performances for resist films cured by dryetching, ashing and ion implantation processes and those modified bymetallic side-products etched from lower metal film materials duringsaid processes, or anti-corrosive performances of lower metal wiringduring the resist removal process.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a resist removercomposition that can easily and quickly remove resist films cured by dryetching, ashing and ion implantation processes and those modified bymetallic side-products etched from metal film materials during saidprocesses at a low temperature, and which can minimize the corrosion oflower metal wiring.

In order to achieve these objects, the present invention provides aresist remover composition comprising a) 10 to 40 wt % of water-solubleorganic amine compounds, b) 10 to 60 wt % of water-soluble polar organicsolvent, c) 10 to 30 wt % of water, and d) 0.1 to 10 wt % of an organicphenol compound containing two or more hydroxyl groups, characterized inthat said water-soluble polar organic solvent is 2-hydroxyisobutyricacid methylester (HBM).

In the resist remover composition according to the present invention, anamino alcohol compound is preferably used as the water-soluble organicamine compound, and the amino alcohol compound is selected from a groupconsisting of 2-amino-1-ethanol, 1-amino-2-propanol, 2-amino-1-propanol,3-amino-1-propanol, 2-amino-1-butanol, 4-amino-1-butanol and a mixturethereof.

The b) water-soluble polar organic solvent may further comprise one ormore compounds selected from a group consisting of dimethylsulfoxide(DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc),dimethylformaide (DMF), dimethylimidazolinoe (DMI) and aliphaticcarboxylic acid ester.

In addition, the aliphatic carboxylic acid ester is preferably selectedfrom a group consisting of β-methoxy isobutyric acid methylester (HBM),2-hydroxypropionic acid isopentyl ester, 2-hydroxypropionic acid butylester, ethyl-3-ethoxypropionate (EEP), methyl-3-methoxypropionate (MMP),ethyl-2-hydroxy propanate, butyl-2-hydroxy propanoate and a mixturethereof.

The phenol compound containing two or more of hydroxyl groups isselected from a group consisting of the compounds represented by thefollowing formulae 1 to 5:

In the Formulae 1 to 5, R₁, which may be the same or different, is aC1-4 alkyl or C1-4 alkoxy group; R₂, which may be the same or different,is hydrogen, a C1-4 alkyl group, or a C1-4 alkoxy group; R₃ and R₄,which may be the same or different, are a C1-4 alkyl or C1-4 alkoxygroup; k is an integers of 1 to 3; m₁ to m₇ are integers of 1 to 3; andn₁ to n₄ are integer of 0 to 3. Preferably, R₁ is a C1-4 alkyl group, R₂to R₄ are C1-4 alkyl groups, k and m₁ to m₇ are 1, and n₁ to n₄ are 0 or1.

The resist remover composition according to the present invention caneasily and quickly remove resist film that is cured by dry etching,ashing and ion implantation processes and those modified by metallicside-products etched from lower metal film materials during saidprocesses at a low temperature. In addition, it can minimize thecorrosion of lower metal wiring, particularly side pitting during theresist removal process, and it decreases the phenomenon in which resistsdissolved in resist remover are extracted to redeposit on the surface ofa substrate. In addition, it can be rinsed with water without a need touse organic solvents such as isopropylalcohol and dimethylsulfoxide in asubsequent rinsing process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows Sample b-16 that has undergone a dry etching process forforming via holes (1) that function as electrical connection passageswith a lower metal wiring pattern and an ashing process for removingmost resists.

FIG. 2 is a SEM photo showing results of testing resist-removingperformance using the resist remover composition of Example 10 at 50° C.

FIG. 3 is a SEM photo showing results of testing resist-removingperformance using the resist remover composition of Comparative Example7 at 50° C.

DETAILED DESCRIPTION AND THE PREFERRED EMBODIMENTS

The present invention will be explained in more detail.

In the resist remover composition of the present invention, the a)water-soluble organic amine compounds are preferably amino alcohols. Asexamples, it is preferably selected from a group consisting of2-amino-1-ethanol, 1-amino-2-propanol, 2-amino-propanol,3-amino-1-propanol, 2-amino-1-butanol, 4-amino-1-butanol and a mixturethereof, and 2-amino-1-ethanol is most preferable from an industrialviewpoint considering resist removing performances and costs.

The content of the water-soluble organic amine compound is preferably 10to 40 wt %, and more preferably 20 to 30 wt %. Specifically, if thecontent is less than 10 wt %, it will be difficult to completely removeresist modified by the preceding dry etching and/or ion implantationprocesses, and if the content exceeds 40 wt %, the corrosion of lowermetal wiring film materials will be serious.

The b) water-soluble organic solvent is preferably 2-hydroxyisobutyricacid methylester (HBM). In addition, it may further comprisewater-soluble polar organic solvents selected from a group consisting ofdimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide(DMAc), dimethylformamide (DMF), dimethylimidazolidinone (DMI),aliphatic carboxylic acid ester and a mixture thereof.

The aliphatic carboxylic acid ester of the water soluble polar organicsolvent is preferably selected from a group consisting of β-methoxyisobutyric acid methylester (MBM), 2-hydroxypropionic acidisopentylester, 2-hydroxypropionic acid butyl ester,etyl-3-ethoxypropionate (EEP), methyl-3-methyoxypropionate (MMP),ethyl-2-hydroxy propanate, butyl-2-hydroxy propanoate and a mixturethereof.

Specifically, the water-soluble polar organic solvent preferably has adipole moment of 3.0 or more, and more preferably 4.0 or more. A dipolemoment indicates polarity of a solvent, and a higher value means ahigher polarity. The water-soluble polar organic solvents in Table 1have dipole moments of 3.0 or more, and those having dipole moments of4.0 or more include DMSO, NMP, DMI, etc. The higher the dipole moment ofb), the better the resist removal performance and dissolving performanceof the resist remover composition of the present invention.

The 2-hydroxyisobutyric acid methylester (HBM) is advantageously used asthe b) water-soluble polar organic solvent, because it can be easilymixed with the a) water-soluble organic amine compound. As a result ofstudies, the present inventors have found that when amine is produced bythe reaction of amino alcohol and the 2-hjydroxyisobutyric acid methylester (HBM), the strippabilities of the resists become different becauseof the reducing power of the produced amine. When amine is produced bythe reaction between aliphatic carboxylic acid ester and amino alcohol,the strippability of the resist is excellent because the produced aminehas good reducing power compared to organic polar solvents such asdimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide(DMAc), dimethylformamide (DMF), dimethylimidazolidinone (DMI), etc.Particularly, HBM allows most excellent strippability because itproduces less side-products such as ethanol, etc. compared to the otheraliphatic carboxylic acid esters.

In addition, the b) water-soluble polar organic solvent preferably has aboiling point of 150° C. or more, and more preferably 180° C. or more interms of volatility. The water-soluble polar organic solvents of Table 1that satisfy said requirement allow stable stripping performance of theresist remover composition because they have a very high affinity towater. In addition, they have advantages in that a rinsing process forremoving the remover composition deposited on a substrate after theresist removal process can be proceeded with pure water instead oforganic solvent. In addition, even if a trace amount of polar organicsolvents remain, they do not adversely affect a semiconductor devicesince they have low corrosiveness on the metal conductive layer.

TABLE 1 DMSO NMP DMI DMF DMAc Dipole moment 4.3 4.09 4.05 3.86 3.79Boiling point (° C.) 189 202 225 153 166

The content of the b) water-soluble polar organic solvent is preferably10 to 60 wt %, more preferably 20 to 50 wt %, and most preferably 25 to45 wt %. Results of studies have confirmed that as the dipole moment ofthe water-soluble polar organic solvent increases, so does the resinsolubility of the solvent on the resist composition, and it particularlyhas excellent solubility for unmodified resists that have undergonepreceding processes. If the content of the water-soluble polar organicsolvent is less than 20 wt %, the solubility for resists that haveundergone dry processes such as etching or an ion implantation processwill be lowered. On the other hand, the upper limit of the content ofthe water-soluble polar organic solvent of 50 wt % is set considering acompositional ratio with the other ingredients.

The c) water is preferably pure water filtered through an ion exchangeresin, and more preferably deionized water having a resistivity of 18 MΩor more.

The water content is preferably 10 to 30 wt %, and more preferably 15 to25 wt %. If the water content is less than 10 wt %, the strippabilityfor resists that have been seriously modified by metallic side-productsgenerated after dry etching and ashing processes will decrease. However,if the water content exceeds 30 wt %, lower metal wiring may be corrodedduring the stripping process and the strippability for unmodifiedresists that comprise most of the resist will be decreased because thecontents of the a) water-soluble organic amine compound and the b)water-soluble polar organic solvent will be decreased. Results ofstudies have confirmed that the water content is preferably 10 to 30 wt%.

In the resist remover composition of the present invention, the d)organic phenol compound containing two or more hydroxyl groups, whichfacilitates resist removal, is selected from a group consisting ofcompounds of the following formulae 1 to 5.

Wherein R₁, which may be the same or different, is a C1-4 alkyl or C1-4alkoxy group; R₂, which may be the same or different, is a hydrogenatom, a C1-4 alkyl group, or a C1-4 alkoxy group; R₃ and R₄, which maybe the same or different, are a C1-4 alkyl or C1-4 alkoxy group; k is aninteger of 0 to 3; m₁ to m₇ are integers of 1 to 3; and n, to n₄ areintegers of 0 to 3. Preferably, R₁ is a C1-4 alkyl group, R₂ to R₄ areC1-4 alkyl groups, k and m₁ to m₇ are 1, and n₁, to n₄ are 0 or 1.

As a result of many studies, it has been discovered that the organicphenol compound containing two or more hydroxyl groups remarkablyimproves resist removal performance at a low temperature compared tocompounds having a hydroxyl group of less than two such as cresol,xylenol, and salicylic aldehyde. The examples of organic phenolcompounds containing two or more hydroxyl groups include bisphenols suchas 2,4′-methylenebisphenol, bisphenol A, bisphenol C, bisphenol E,bisphenol F, bisphenol AP, bisphenol M, bisphenol P,1,1′-bis(4-hydroxylphenyl)cyclopentane,9,9′-bis(4-hydroxyphenyl)fluorine,1,1′-bis(5-methyl-2-hydroxylphenyl)methane,3,5-dimethyl-4-hydroxybenzylphenol, 4,4′-hydroxylbenzophenone, etc.;tris phenols such as 1,1,1-(tris(4-hydroxyphenyl)methane,1,1,1-tris(4-hydroxyphenyl)ethane,1,1-bis(3-methyl-4-hydroxyphenyl)-1-(4-hydroxylphenyl)methane,1,1-bis(2,5-dimethyl-4-hydroxyphenyl)1-(2-hydroxyphenyl)methane,1,1-bis(3,5-methyl-4-hydroxyphenyl)-1-(2-hydroxyphenyl)methane,2,6-bis(5-methyl-2-hydroxybenzyl)-4-methylphenol,2,6-bis(3-methyl-4-hydroxybenzyl)-4-methylphenol,2,6-bis(3,5-dimethyl-4-hydroxybenzyl)4-methylphenol, trisphenol-TC,etc.; tetrakis phenols such as1,1,2,2-tetrakis(3-methyl-4-hydroxyphenyl)ethane,1,1,3,3-tetrakis(4-hydroxyphenyl)propane,1,1,5,5-tetrakis(4-hydroxyphenyl)pentane,α,α,α′,α′-tetrakis(4-hydroxyphenyl)-3-xylene,α,α,α′,α′-tetrakis(4-hydroxyphenyl)-4-xylene,α,α,α′,α′-tetrakis(3-methyl-4-hydroxyphenyl)-3-xylene,α,α,α′,α′-tetrakis(3-methyl-4-hydroxyphenyl)-4-xylene, etc.;hydroxybenzophenones such as 2,3,4-trihydroxybenzophenone,2,4,4′-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone,2,2′,3,3′,4-pentahydroxybenzophenone,2,2′,3,3′,4,4′-hexahydroxybenzophenone, etc.;1-[1′-methyl-1′-(4′-hydroxyphenyl)ethyl]-4-[1′,1′-bis-(4-hydroxyphenyl)ethyl]benzene,2,6-bis(2′-hydroxy-5′-methylphenylethyl)-4-methyl-1-hydroxybenzene, etc.

The d) organic phenol compound containing two or more hydroxyl groups isessential for removing resist films cured by dry etching, ashing and ionimplantation processes and those modified by metallic side-productsetched from lower metal film materials during said processes, andeffectively infiltrates hydroxide ions generated by the reaction betweenthe water-soluble organic amine compound and hydrogen ions of water intoa contact surface between the resist film and a semiconductor substrate.In addition, the d) organic phenol compound containing two or morehydroxyl groups prevents hydroxyl groups generated from the resistremover composition from corroding lower metal film materials.

In the resist remover composition of the present invention, the contentof the d) organic phenol compound containing two or more hydroxyl groupsis preferably 0.1 to 10 wt %, and more preferably 0.5 to 5 wt %. If thecontent of the compound is less than 0.1 wt %, the low temperaturestrippability for resist films that have been seriously modified bymetallic side-products generated after dry etching and ion implantationprocesses will be decreased and the corrosion of lower metal filmmaterials will become serious. If the content exceeds 10 wt %, thestrippability for resist films will be uneconomical from an industrialviewpoint considering preparation costs.

Although the organic phenol compound containing two or more hydroxylgroups alone can facilitate anti-corrosive effects to the resist removercomposition of the present invention, it cannot completely solve thepitting phenomenon, which is a partial erosion generated on the side orupper surface of the lower metal wiring film material. As a result ofstudies, it has been discovered that mixing triazole compounds with theorganic phenol compound containing two or more hydroxyl groups canprevent the pitting. Particularly, it has been discovered that mixing atwo-component system triazole compound comprising benzotriazole (BT) andtollyltriazole (TT) with the aromatic phenol compound containinghydroxyl groups in a suitable ratio would improve the effects ofpreventing side pitting that occurrs on the side-wall of resist film.

The resist remover composition of the present invention may furthercomprise benzotriazole (BT), tollyltriazole (TT), carboxylicbenzotriazole (CBT) and a mixture thereof, among which a two-componentsystem triazole compound comprising BT and TT is preferable.

The content of the triazole compound is preferably 0.5 to 5 wt %. If thecontent is less than 0.5 wt %, pitting-preventing performance will beinsignificant, and if the content exceeds 5 wt %, the viscosity of theresist remover composition will increase and thus convenience during usewill be lowered.

The resist remover composition of the present invention preferablycomprises a silicon-type surfactant represented by the following formula6.

Wherein x is an integer of 0-10; y is an integer of 1-10; m is aninteger of 0-10; n is an integer of 1-10; EO represents an ethyleneoxygroup; PO represents a 1,2-propyleneoxy group; and Z represents ahalogen atom or alkyl group.

The surfactant must be selected from those having sufficient solubilityfor a water-soluble organic amine compound, water-soluble polar organicsolvent and water. As a result of studies, it has been discovered thatthe silicon type surfactant represented by the formula 6 is preferablein terms of a decrease in surface tension and prevention of photoresistredeposit. In addition, although a fluorine type surfactant widely usedin conventional photoresist remover compositions can exhibit excellentsurface-active effects when used in small amounts, it cannot be used inthe resist remover composition of the present invention because itgenerates impurities or residues when dissolved in water and thus it haslow solubility for the composition of the present invention.

However, since the silicon type surfactant represented by the formula 6has high solubilities for water, water-soluble organic amine compoundsand water-soluble polar organic solvent while exhibiting excellentsurface-activating effects, it can achieve desired surface-activatingeffects without imposing the above problems. It also has excellenteffects for preventing redeposit of photoresist, contrary toconventional polyethyleneglycol-type surfactants.

The redepositing of photoresist, which indicates a phenomenon in whichthe solid components of photoresist that have been dissolved in aphotoresist remover composition are redeposited on a semiconductorsubstrate and become irremovable, when a semiconductor substrate isdeposited in a photoresist remover composition that has been used for along time, is one of the major causes for inferiority of photoresistremoval.

The surfactant lowers the surface tension of the contact surface betweenlower metal film materials such as Al, dopped Si, Cu, Ti, W, etc. andthe photoresist remover composition, thereby allowing the photoresistremover composition to penetrate deeply between micro-patterns of theconductive layer that is formed of lower metal film materials. Althoughsuch a function of the surfactant is insignificant when the size of themicro-pattern is comparatively large, it is more important as themicro-pattern becomes finer. And, this directly affects the productionyield of semiconductor devices.

The content of the surfactant is preferably 0.01 to 1 wt %. If thecontent of the surfactant is less than 0.01 wt %, it will becomedifficult to remove metal oxides on the side part of micro-patterns andsufficient surface-activating effects cannot be achieved. If the contentof the surfactant exceeds 1 wt %, photoresist redepositing-preventioneffects will be lowered. Accordingly, in the photoresist removercomposition of the present invention, the content of the silicon typesurfactant is most preferably 0.01 to 1 wt %.

A method for removing resist film that has been used as a mask duringthe preceding photo-etching process using the resist remover compositionof the present invention will now be explained.

The method for removing resist film from a substrate using the resistremover composition of the present invention comprises contacting asubstrate on which a resist film is coated with the resist removercomposition of the present invention by a conventional method. Thecontact can be made by immersing the substrate in the resist removercomposition or by spraying the resist remover composition on thesubstrate. Other methods can be used.

In addition, the conventional resist remover composition can exhibitsufficient resist removal performance only if heated to a temperature of80° C. or more, while the resist remover composition of the presentinvention can exhibit sufficient resist-removing performance at arelatively low temperature of 20 to 50° C. Therefore, the resist removercomposition of the present invention can reduce the amount ofevaporation (i.e., consumption) of remover composition and energyconsumption during the resist removal process, and it can also reducehealth problems of operators due to the evaporated organic solvents.

The resist remover composition of the present invention can be appliedto a positive resist, a negative resist or a positive/negativedouble-use resist. As examples, it can be applied to a positive resistcomposition comprising novoalc phenol resin and a naphtoquinonediazidecompound; a positive resist composition comprising a photoacid-producing agent which produces acid when light-exposed, compoundsof which solubility increase in alkaline aqueous solutions whendecomposed by acid and alkali-soluble resin; a positive resistcomposition comprising a photo acid-producing agent which produces acidwhen light-exposed and an alkali-soluble resin containing functionalgroups of which solubility increases in alkaline aqueous solutions whendecomposed by acid; and a negative resist composition comprising a photoacid-producing agent which produces acid when light-exposed, across-linking agent and an alkali-soluble resin, among which thepositive resist composition comprising novolac phenol resin andnaphtoquinonediazide compound is particularly effective.

The present invention will now be explained in more detail withreference to the following Examples. However, the scope of the presentinvention is not limited thereto. In addition, unless specificallyindicated, the % and mixing ratios are based on weight. The performanceevaluation for the resist remover composition of Examples andComparative Examples is conducted by the following method.

(1) Resist Removal Performance

Preparation of Sample a

On the surface of 5-inch silicon wafers on which aluminum film wasdeposited, a commonly used positive resist composition (MitsubishiCompany product, Product name: IS401) was spin-coated such that thefinal film thickness reached 1.6 μm. The silicon wafers were pre-bakedat 100° C. for 90 seconds on a hot plate. Masks having a predeterminedpattern were placed on the resist film, ultraviolet rays were irradiatedthereto, and the resist film was developed at 21° C. for 60 secondsusing tetramethylammonium hydroxide (TMAH) developer (Dongjin ChemicalIndustry Company product, Product name: DPD-100S). The wafers on whichthe resist patterns were formed were hard-baked at 140° C., 160° C. and180° C. respectively for 300 seconds on a hot plate, and they weredesignated a-14, a-16 and a-18.

Preparation of Sample b

Using the resist pattern formed on the Samples a as a mask, a CF₄/O₂ gasmixture as etching gas, and using a dry etching apparatus (AppliedMaterial Company product, Model name: P/500(single handling type)), thelower aluminum film that was not covered by the resist pattern wasetched to form a metal wiring pattern. At this time, the processconditions were controlled such that organic metal film was not formedby the dry etching process. Then, only a part of the upper layer of theresist film was removed by an ashing process using an ashing apparatus(Dongkyung Chemical Industry Company product, Model name: TCA-2400) andan O₂/N₂ gas mixture as a reaction gas, and the samples were designatedb-14, b-16 and b-18. The etching conditions for the dry etching processwere as follows:

[Dry etching conditions]

Etching gas: CF₄/O₂ gas mixture

Gas flow rate: 200 sccm

Pressure: 20 m Torr

RF Power: 400 W

Magnetic field: 140 Gauss

Stage temperature: 20° C.

Etching time: 300 seconds

[Ashing Conditions]

Reaction gas: O₂/N₂ gas mixture=950/50 sccm

Pressure: 5 m Torr

Microwave Power: 1 Kw

Wafer temperature: 200° C.

Ashing time: 120 seconds/wafer

Preparation of Sample c

As⁺ dopant was ion-injected on the front side of the Samples a at aradiation dose of 1×10¹⁶ ions/cm² and an acceleration energy of 80 KeV.The ion injection angle was set to 0° so as to conduct the ion-injectionperpendicular to a substrate side. The samples were moved to adownstream mode microwave ashing apparatus (Dongkyung Chemical IndustryCompany product, Model name: TCA-2400), and only a part of the upperlayer of the resist film was removed through an ashing process using anO₂/N₂ gas mixture as a reaction gas, and the samples were designatedc-14, c-16 and c-18.

[Ashing conditions]

Reaction gas: O₂/N₂ gas mixture=950/50 sccm

Pressure: 5 mTorr

Microwave Power: 1 Kw

Wafer temperature: 200° C.

Ashing time: 120 sec/wafer

Resist Removal Test

The Samples a, b and c were respectively immersed in a resist removercomposition at 25° C. and 50° C. for 3 minutes. The samples were takenout of the resist remover composition, and then, they were washed withpure water and dried with nitrogen gas. They were examined to determinewhether or not resist residues were deposited on the surface of a linepattern and around a via-hole pattern, using a SEM. The resist removalperformance was evaluated on the basis of the following standards andthe results are presented in Tables 3 and 4.

∘: Resist residues were completely removed around via-hole pattern andthe surface of line pattern.

Δ: 80% or more of resist residues were removed around via-hole patternand the surface of line pattern, but small amount thereof remained.

X: Most of resist residues were not removed around via-hole pattern andthe surface of line pattern.

(2) Metal Wiring Corrosion Test

Preparation of Sample d-12

On the surface of 5-inch silicon wafers on which 1 10,000 Å aluminumfilm was formed, a commonly used positive resist composition (MitsubishiCompany product, Product name: IS401) was spin-coated such that thefinal film thickness reached 1.6 μm.

The resist film was pre-baked on a hot plate at 100° C. for 90 seconds.A mask having a predetermined pattern was placed on the resist film,ultraviolet rays were irradiated thereto and the resist film wasdeveloped using 2.38% tetramethylammonium hydroxide (TMAH) developer(Dongjin Chemical Industry Company product, Product name: DPD-1002) at21° C. for 60 seconds.

The wafer on which the resist pattern was formed was hard-baked on a hotplate at 120° C. for 300 seconds.

Using the thus formed resist pattern as a mask and CF₄/O₂ gas mixture asan etching gas, an aluminum film which was not covered by the resistpattern was etched in a dry etching apparatus (Applied Material Companyproduct, Model name: P/5000) to form a metal wiring pattern. At thistime, process conditions were controlled so as to not generate organicmetal film during the dry etching process. Only a part of the upperlayer of the resist film was removed through an ashing process using anO₂/N₂ gas mixture as a reaction gas in an ashing apparatus (DonkyungChemical Industry Company, Model name: TCA-2400), and the sample wasdesignated d-12.

Metal Wiring Corrosion Test

The Samples d-12 were immersed in a resist remover composition for 10minutes, 2 hours and 24 hours respectively while maintaining atemperature of 50° C. The samples were taken out of the resist removercomposition, and then they were washed with pure water and dried withnitrogen gas. Then, the upper and side surfaces of the aluminum patternline were examined using a SEM, and the degree of corrosion wasevaluated on the basis of the following standards. The results arepresented in Table 5.

⊚: No corrosion on the side or upper surface of aluminum pattern line

∘: Only a part of the side surface of aluminum pattern line wascorroded.

Δ: Parts of the side and upper surfaces of aluminum pattern line werecorroded.

X: The side or upper surface of aluminum pattern was seriously corroded.

(3) Metal Ion Eruption Test

20 Samples d-12 were immersed respectively in a 2 kg resist removercomposition while maintaining a temperature of 50° C. The resist removercomposition was sampled when 12 hours, 24 hours and 48 hours hadelapsed. The amounts of aluminum ions that had erupted from the loweraluminum wiring pattern of the Sample d-12 were measured using an ICP-MSapparatus (Inductively Coupled Plasma-Mass Spectroscopy, PERKIN-ELMERCompany product, Model name: ELAN 6000) equipped with an ETV (ElectroThermal Vaporizer). The results are presented in ppb in Table 6.

(4) Resist Redeposit Test

20 kg of the resist remover compositions of Example 7 and ComparativeExample 3 were tested for their resist removal capabilities whileincreasing the treated sheet number of the Samples b-14 and c-14 to from1 to 100, 200, 300 and 400 sheets, while maintaining the temperature at50° C. During the test, the amount of resist that was redeposited on asubstrate was examined. When the treated sheet numbers were respectively1, 100, 200, 300 and 400, the substrate was sampled, rinsed with purewater and dried with nitrogen gas. Then, the numbers of microparticlesof resist residues redeposited on the substrate were measured using asurface inspection apparatus (Japan Canon Company product, Model name:WIS-850). The results are presented in Table 7.

EXAMPLES 1 TO 11 AND COMPARATIVE EXAMPLES 1 TO 7

The ingredients a) to d) of the composition of the present inventionwere mixed in a ratio as described in Table 2 to prepare the resistremover compositions of Examples 1 to 11 and Comparative Examples 1 to7. The thus obtained resist remover compositions were tested for (1)their resist removal performance, (2) metal wiring corrosion, (3) metalion eruption, and (4) resist redeposition. The results are presented inTables 3 to 7.

TABLE 2 The compositional ratios of resist remover compositionsCompositional Ratios of Resist Remover Composition (wt %) d) OrganicPhenol a) b) Compound e) Organic Amine Polar Organic c) (having 2 ormore Hydroxyl Compound Solvent Water of OH groups) Amine Type ContentType Content Content Type Content Content Examples 1 MIPA 15 NMP 45 32.0Formula 7 8 — 2 MIPA 17 DMF 50 29.5 Formula 8 3.5 — 3 MIPA 25 HBM 49.523.0 Catechol 2.5 — 4 MEA 21 NMP 47 30.0 Formula 9 2 — 5 MEA 35 DMI 3030.0 Formula 10 5 — 6 MEA 30 NMP 50 18.0 Formula 11 2 — 7 MEA 40 NMP 3025.0 Catechol 5 — 8 MEA 40 HBM 30 26.0 Formula 12 4 — 9 MEA 30 HBM 4721.0 Catechol 2 — 10 MEA 30 HBM + MMP 30 + 10 28.0 Catechol 2 — 11 MEA32 HBM + MMP 31 + 11 24.0 Catechol 2 — Comparative 1 MEA 10 MFDG 22 48 —— 20 Examples 2 MEA 15 EC 30 30 — — 25 3 MEA 3 DMAc 97.0 — — — — 4 AEE70 MF 20 8 m-C 2 — 5 MEA 60 BC 35 5 — — — 6 MEA 60 BC 30 10 — — — 7 MEA40 EC 30 26 SA 4 — MIPA: Monoisopropanolamine MEA: Monoethanolamine AEE:Aminoethoxy ethanol HBM: 2-hydroxyisobutyric acid methylester DMF:dimethylformamide NMP: N-methylpyrrolidone DMI: dimethylimidazolidinoneDMAc: dimethylacetamide MFDG: dipropyleneglycolmonoethylether EC: Ethylcarbitol BC: Butyl carbitol MF: Methyl formamide PEG: Polyethylenegylcolm-C: m-Cresol SA: Salycylic aldehyde [Formula 7]

[Formula 8]

[Formula 9]

[Formula 10]

[Formula 11]

[Formula 12]

TABLE 3 Resist removal performance at a resist remover compositiontemperature of 25° C. Temperature of Remover Composition  25° C. Sample(Hard-baking Temperature) a- b- c- a-14 16 a-18 b-14 16 b-18 c-14 16c-18 Example  1 ◯ ◯ ◯ ◯ ◯ Δ ◯ ◯ Δ  2 ◯ ◯ Δ ◯ ◯ ◯ ◯ ◯ Δ  3 ◯ ◯ ◯ ◯ ◯ ◯ ◯◯ ◯  4 ◯ ◯ Δ ◯ Δ ◯ ◯ ◯ Δ  5 ◯ ◯ ◯ ◯ Δ Δ Δ ◯ ◯  6 ◯ ◯ ◯ ◯ ◯ Δ ◯ Δ Δ  7 ◯◯ ◯ Δ ◯ ◯ Δ ◯ ◯  8 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  9 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ 10 ◯ ◯ ◯ ◯ ◯ ◯◯ ◯ ◯ 11 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ Comparative Example  1 Δ X X Δ X X Δ X X  2 ◯Δ X ◯ Δ Δ ◯ Δ X  3 Δ X X X X X X X X  4 Δ X X X X X Δ X X  5 ◯ Δ X X X XX X X  6 ◯ Δ X ◯ X X Δ X X  7 ◯ X X Δ X X Δ Δ X

TABLE 4 Resist removal performance at a resist remover compositiontemperature of 50° C. Temperature of Remover Composition  50° C. Sample(Hard-baking Temperature) a- a- a- b- b- b- c- c- c- 14 16 18 14 16 1814 16 18 Example  1 ◯ ◯ ◯ Δ ◯ ◯ Δ ◯ ◯  2 ◯ ◯ Δ ◯ ◯ ◯ ◯ ◯ ◯  3 ◯ ◯ ◯ ◯ ◯◯ ◯ ◯ ◯  4 ◯ ◯ Δ ◯ ◯ ◯ ◯ ◯ ◯  5 ◯ ◯ ◯ Δ Δ ◯ ◯ ◯ ◯  6 ◯ ◯ ◯ ◯ ◯ Δ ◯ Δ Δ 7 ◯ ◯ ◯ Δ ◯ ◯ Δ Δ ◯  8 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  9 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ 10 ◯ ◯ ◯◯ ◯ ◯ ◯ ◯ ◯ 11 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ Comparative Example  1 Δ X X Δ X X Δ XX  2 ◯ Δ Δ ◯ ◯ Δ ◯ Δ Δ  3 Δ Δ X Δ X X Δ X X  4 Δ X X X X X Δ X X  5 ◯ ◯Δ X X X X X X  6 ◯ Δ X ◯ X X Δ X X  7 ◯ Δ Δ ◯ X X Δ X X

Referring to Tables 3 and 4, it can be seen that the resist removercomposition according to the present invention (Examples 1 to 11) caneffectively remove resist films that have been cured and modified by ahard-bake process, a dry etching process, an ion implantation processand/or an ashing process even at a low temperature (25, 50° C.).

Although the resist remover compositions of the Comparative Examples cancomparatively effectively remove resist films that were not exposed to adry etching process, an ion implantation process and/or an ashingprocess (Samples a-14, a-16, a-18) even at a low temperature, the resistremoval performance decreased as the hard-bake temperature increased,and the resist removal performance for resist films that have been curedand modified by the dry etching process, the ion implantation processand/or the ashing process (Samples b-14 to c-18) were poor.

Detailed examination of Tables 3 and 4 reveals that the resist removercomposition of Comparative Example 3 which does not contain an organicphenol compound containing two or more hydroxyl groups and water showedthe poorest resist removal performance for cured and modified resistfilm.

In addition, the composition of Comparative Example 4 which containedwater but contained a comparatively excessive amount of water-solubleorganic amine compound showed poor resist removal performance for curedand modified resist film. It can be seen that the compositions of theComparative Examples which did not contain an organic phenol compoundcontaining two or more hydroxyl groups, or which contained an organicphenol compound having one hydroxyl group showed poor resist removalperformance for cured and modified resist films at low temperature. Fromthe Tables 3 and 4, it can be confirmed that the component that is themost influential in the removal of cured and modified resist film is theorganic phenol compound containing two or more hydroxyl groups, and itcan be seen that the compositions of Examples 3, 8 and 9 which containedHBM as an organic polar solvent and those of Examples 10 and 11 whichcontained HBM+MMP showed better resist removal performance than thosecontaining other organic solvents.

TABLE 5 Metal wiring corrosion test Temperature of RemoverComposition  50° C. Immersion Time 10 minutes 2 hours 24 hours Examples1 ⊚ ◯ Δ 2 ⊚ ◯ Δ 3 ⊚ ⊚ ⊚ 4 ⊚ ◯ Δ 5 ⊚ ◯ Δ 6 ⊚ ⊚ ◯ 7 ⊚ ⊚ ◯ 8 ⊚ ⊚ ⊚ 9 ⊚ ⊚ ◯10 ⊚ ⊚ ⊚ 11 ⊚ ⊚ ⊚ Comparative 1 Δ X X Examples 2 ◯ Δ Δ 3 Δ X X 4 Δ X X 5Δ X X 6 ◯ Δ X 7 Δ X X

Referring to Table 5, it can be seen that in the resist removercomposition according to the present invention (Examples 1 to 11), theorganic phenol compound containing two or more hydroxyl groups whichexhibits anti-corrosion effects hardly corroded the lower metal wiringpattern until 2 hours after immersion, and the compositions of Examples3, 8 and 9 using HBM as the organic polar solvent and those of Examples10 and 11 using HBM+MMP did not corrode the metal wiring pattern evenafter 2 hours or more had elapsed. However, those of ComparativeExamples 1 to 7 began to corrode the lower metal wiring pattern when 10minutes had elapsed after immersion, and it seriously corroded a part ofthe lower metal wiring pattern after two hours. Accordingly, if theremover composition of the Comparative Examples is used to conduct theresist removal process, a concerned exists that metal wiring of thesemiconductor devices will be cut, causing a decrease in productionyield, while the remover composition of the present invention isexpected to decrease such risk.

More detailed examination of Table 5 reveals that the composition ofComparative Examples 3, 5 and 7 which did not contain an organic phenolcompound having two or more hydroxyl groups caused serious corrosion ofthe upper and side surfaces of the lower metal wiring pattern toseriously impair pattern width.

In addition, the composition of Comparative Example 1 having acomparatively high water content as an anti-corrosive also causedserious corrosion of the lower metal wiring pattern.

TABLE 6 Metal ion eruption test (in ppb) Temperature of RemoverComposition 50° C. Immersion Time 0 hours 12 hours 24 hours 48 hoursExamples  1 1 3 19 35  2 1 3 17 36  3 1 2 13 29  4 2 3 19 37  5 1 4 2141  6 1 3 16 32  7 2 3 15 34  8 1 5 14 31  9 1 1 15 30 10 1 3 13 30 11 12 12 29 Comparative Examples  1 1 35 69 145  2 1 19 42 210  3 2 24 39109  4 1 25 45 167  5 1 42 63 231  6 2 28 45 114  7 2 31 48 121

Referring to Table 6, it can seen that the resist remover compositionsof the present invention (Examples 1 to 11) showed little change in theamount of aluminum ion eruption until 12 hours had elapsed, indicatingthey caused little corrosion of the lower metal wiring pattern. On theother hand, the compositions of Comparative Examples 1 to 7 showedincreases in the amount of aluminum ion eruption by about 10 times onaverage of those of the Examples after 12 hours had elapsed, indicatingthey caused serious corrosion of the lower metal wiring pattern.

These results are due to the fact that the compositions of Examples 1 to11 have excellent anti-corrosiveness because they contain d) organicphenol compounds having two or more hydroxyl groups which functions asan anti-corrosive, while the compositions of Comparative Examples 1 to 7do not.

TABLE 7 Resist redeposit test Sample b-14 Sample c-14 Treated SheetComparative Comparative Number Example 10 Example 3 Example 10 Example 31 0 0 0 0 100 2 14 1 18 200 3 37 3 40 300 6 71 6 69 400 9 138 10 140

Referring to Table 7, it can be seen that the composition of ComparativeExample 3 had about 10 times the number of resist residuemicro-particles than those of the composition of Example 10, for 100 to400 treated sheets.

As the above shows, the resist remover composition according to thepresent invention can easily and quickly remove resist films that havebeen cured by dry etching, ashing and ion implantation processes andthose modified by metallic side-products etched from lower metal filmmaterials during said processes. It can also minimize the corrosion oflower metal wiring, particularly side pitting, and decrease thephenomenon in which resists that have been dissolved in resist removerare extracted to redeposit on the surface of a substrate even with aprolonged use. In addition, it can be rinsed with water without a needto use organic solvents such as isopropyl alcohol and dimethylsulfoxideduring a subsequent rinsing process.

1. A resist remover composition comprising a) 10 to 40 wt % ofwater-soluble organic amine compound, b) 10 to 60 wt % of water-solublepolar organic solvent, c) 10 to 30 wt % of water, and d) 0.1 to 10 wt %of organic phenol compound containing two or more hydroxyl groups,characterized in that the water-soluble polar organic solvent is2-hydroxyisobutyric acid methylester (HBM).
 2. The resist removercomposition according to claim 1, wherein the water-soluble organicamine compound is amino alcohol.
 3. The resist remover compositionaccording to claim 2, wherein the amino alcohol is selected from a groupconsisting of 2-amino-1-ethanol, 1-amino-2-propanol, 2-amino-1-propanol,3-amino-1-propanol, 2-amino-1-butanol, 4-amino-1-butanol and a mixturethereof.
 4. The resist remover composition according to claim 1, whereinthe water-soluble polar organic solvent is selected from a groupconsisting of dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP),dimethylacetamide (DMAc), dimethylformamide (DMF),dimethylimidazolidinone (DMI), aliphatic carboxylic acid ester and amixture thereof.
 5. The resist remover composition according to claim 4,wherein the aliphatic carboxylic acid ester is selected from a groupconsisting of β-methoxy isobutyric acid methyl ester (MBM),2-hydroxypropionic acid isopentyl ester, 2-hydroxypropionic acid butylester, ethyl-3-ethoxypropionate (EEP), methyl-3-methoxypropionate (MMP),ethyl-2-hydroxy propanate, butyl-2-hydroxy propanoate and a mixturethereof.